Observation of velocity overshoot in silicon inversion layersASSADERAGHI, F; PING KEUNG KO; CHENMING HU et al.IEEE electron device letters. 1993, Vol 14, Num 10, pp 484-486, issn 0741-3106Article

Hot-carrier current modeling and device degradation in surface-channel p-MOSFET'sTONG-CHERN ONG; PING-KEUNG KO; CHENMING HU et al.I.E.E.E. transactions on electron devices. 1990, Vol 37, Num 7, pp 1658-1666, issn 0018-9383, 9 p.Article

Measurement and modeling of short-channel MOS transistor gate capacitancesSHEU, B. J; PING-KEUNG KO.IEEE journal of solid-state circuits. 1987, Vol 22, Num 3, pp 464-472, issn 0018-9200Article

A charge conserving non-quasi-static (NQS) MOSFET model for SPICE transient analysisHONG-JUNE PARK; PING KEUNG KO; CHENMING HU et al.IEEE transactions on computer-aided design of integrated circuits and systems. 1991, Vol 10, Num 5, pp 629-642, issn 0278-0070Article

A non-quasi-static MOSFET model for SPICE-AC analysisPARK, H. J; PING KEUNG KO; CHENMING HU et al.IEEE transactions on computer-aided design of integrated circuits and systems. 1992, Vol 11, Num 10, pp 1247-1257, issn 0278-0070Article

A charge sheet capacitance model of short channel MOSFET's for SPICEHONG-JUNE PARK; PING KEUNG KO; CHENMING HU et al.IEEE transactions on computer-aided design of integrated circuits and systems. 1991, Vol 10, Num 3, pp 376-389, issn 0278-0070Article

A non-quasi-static MOSFET model for SPICE ― transient analysisHONG JUNE PARK; PING KEUNG KO; CHENMING HU et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 3, pp 561-576, issn 0018-9383, 16 p.Article

Lucky-electron model of channel hot-electron injection in MOSFETsTAM, S; PING-KEUNG KO; CHENMING HU et al.I.E.E.E. transactions on electron devices. 1984, Vol 31, Num 9, pp 1116-1125, issn 0018-9383Article

The enhancement of gate-induced-drain-leakage (GIDL) current in short-channel SOI MOSFET and its application in measuring lateral bipolar current gain βJIAN CHEN; ASSADERAGHI, F; PING-KEUNG KO et al.IEEE electron device letters. 1992, Vol 13, Num 11, pp 572-574, issn 0741-3106Article

An engineering model for short-channel MOS devicesKAI-YAP TOH; PING-KEUNG KO; MEYER, R. G et al.IEEE journal of solid-state circuits. 1988, Vol 23, Num 4, pp 950-958, issn 0018-9200Article

Recovery of threshold voltage after hot-carrier stressingTONG-CHERN ONG; LEVI, M; PING-KEUNG KO et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 7, pp 978-984, issn 0018-9383Article

Gate current in OFF-state MOSFETJIAN CHEN; TUNG-YI CHAN; PING KEUNG KO et al.IEEE electron device letters. 1989, Vol 10, Num 5, pp 203-205, issn 0741-3106Article

Inversion-layer capacitance and mobility of very thin gate-oxide MOSFET'sMONG-SONG LIANG; JEONG YEOL CHOI; PING-KEUNG KO et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 3, pp 409-413, issn 0018-9383Article

Low-voltage hot-electron currents and degradation in deep-submicrometer MOSFET'sCHUNG, J. E; MIN-CHIE JENG; MOON, J. E et al.I.E.E.E. transactions on electron devices. 1990, Vol 37, Num 7, pp 1651-1657, issn 0018-9383, 7 p.Article

Hot-carrier-induced degradation of metal-oxide-semiconductor field-effect transistors: oxide charge versus interface trapsJEONG YEOL CHOI; PING KEUNG KO; CHENMING HU et al.Journal of applied physics. 1989, Vol 65, Num 1, pp 354-360, issn 0021-8979, 7 p.Article

A simple punchthrough model for short channel MOSFET'sFU-CHIEH HSU; MULLER, R. S; CHENMING HU et al.I.E.E.E. transactions on electron devices. 1983, Vol ED30, Num 10, pp 1354-1359, issn 0018-9383Article

AN ANALYTICAL BREADOWN MODEL FOR SHORT-CHANNEL MOSFET'SFU CHIEH HSU; PING KEUNG KO; SIMON TAM et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1735-1740; BIBL. 8 REF.Article

Hot-electron-induced MOSFET degradation―model, monitor, and improvementCHEMMING HU; TAM, S. C; FU-CHIEH HSU et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 2, pp 375-385, issn 0018-9383Article